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Inversion domain boundaries in ZnO ceramics

Published online by Cambridge University Press:  31 January 2011

M. A. McCoy ,
R. W. Grimes  and
W. E. Lee
M. A. McCoy
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London, and Department of Engineering Materials, University of Sheffield, Sheffield, United Kingdom
R. W. Grimes
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London, United Kingdom
W. E. Lee
Affiliation:
Department of Engineering Materials, University of Sheffield, Sheffield, United Kingdom
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Abstract

Inversion domain boundaries (IDB's) in ZnO ceramics, associated with Sb2O3 doping, have been characterized using a range of electron microscopy techniques. The IDB's lie primarily on basal planes, but frequently are stepped along prismatic planes. The basal IDB can be characterized as (i) an inversion that causes an antisite exchange of cations and anions across the boundary, (ii) an effective displacement of the sixfold screw axis in the wurtzite structure vectors by a translation of 1/3 and (iii) a displacement normal to the boundary. Significant Sb segregation is detected in the basal IDB segments in agreement with previous work, and in ceramics doped with Sb2O3 and Bi2O3. These IDB's contained both Sb and Bi, suggesting that while Bi does not participate in IDB nucleation, it resides in the boundary. Comparison of experimental and calculated HREM images suggests that the IDB is composed of a monolayer of Type I (111) zinc antimonate spinel, consisting of a single layer of octahedrally coordinated zinc and antimony cations.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 8 , August 1996 , pp. 2009 - 2019
Copyright
Copyright © Materials Research Society 1996

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