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Hidden parameters in the plasma deposition of microcrystalline silicon solar cells

Published online by Cambridge University Press:  31 January 2011

M.N. van den Donker
Affiliation:
Institut für Energieforachung-Photovaltank (IPV), Forschungszentrum Jülich GmbH, Jülich 52425, Germany
B. Rech
Affiliation:
Institut für Energieforachung-Photovaltank (IPV), Forschungszentrum Jülich GmbH, Jülich 52425, Germany
R. Schmitz
Affiliation:
Institut für Energieforachung-Photovaltank (IPV), Forschungszentrum Jülich GmbH, Jülich 52425, Germany
J. Klomfass
Affiliation:
Institut für Energieforachung-Photovaltank (IPV), Forschungszentrum Jülich GmbH, Jülich 52425, Germany
G. Dingemans
Affiliation:
Institut für Energieforachung-Photovaltank (IPV), Forschungszentrum Jülich GmbH, Jülich 52425, Germany
F. Finger
Affiliation:
Institut für Energieforachung-Photovaltank (IPV), Forschungszentrum Jülich GmbH, Jülich 52425, Germany
L. Houben
Affiliation:
Institut für Festkorpenforschung (IFF), Forschungszentrum Jülich GmbH, Jülich 52425, Germany
W.M.M. Kessels
Affiliation:
Applied Physics, Technical University (TU) Eindhoven, Eindhoven 5600MB, The Netherlands
M.C.M. van de Sanden
Affiliation:
Applied Physics, Technical University (TU) Eindhoven, Eindhoven 5600MB, The Netherlands
Corresponding
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Abstract

The effect of process parameters on the plasma deposition of μc-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition process. The diagnostics were used to investigate the stability of the substrate temperature during deposition at elevated power and the gas composition during deposition at decreased hydrogen dilution. Based on these investigations, an updated view on the role of the process parameters of plasma power, heater temperature, total gas flow rate, and hydrogen dilution is presented.

Type
Outstanding Meeting Papers
Copyright
Copyright © Materials Research Society 2007

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References

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