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Experimental and theoretical characterization of the surface acoustic wave propagation properties of GaN epitaxial layers on c-plane sapphire

Published online by Cambridge University Press:  31 January 2011

Kook Hyun Choi
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Hyeong Joon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Su Jin Chung
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Jin Yong Kim
Affiliation:
Film Characterization and Properties Group Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8522
Tae Kun Lee
Affiliation:
Department of Materials Science and Engineering, Seoul National University of Technology, Seoul 131-743, Korea
Young Jin Kim
Affiliation:
Department of Materials Science and Engineering, Kyonggi University, Suwon 442-760, Korea
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Abstract

Surface acoustic wave (SAW) propagation properties of gallium nitride (GaN) epitaxial layers on sapphire were theoretically and experimentally characterized. GaN thin films were grown on a c-plane sapphire substrate using a metalorganic chemical vapor deposition system. The experimental characterization of SAW propagation properties was performed with a linear array of interdigital transducer structures, while SAW velocities were calculated by matrix methods. Experimentally, we found pseudo-SAW and high-velocity pseudo-SAW modes in the GaN/sapphire structure, which had a good agreement with calculated velocities.

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Copyright
Copyright © Materials Research Society 2003

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Experimental and theoretical characterization of the surface acoustic wave propagation properties of GaN epitaxial layers on c-plane sapphire
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