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Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

Published online by Cambridge University Press:  26 July 2012

John A. Belot
Affiliation:
Department of Chemistry, the Materials Research Center, and the Science and Technology Center for High Temperature Superconductivity, Northwestern University, Evanston, Illinois 60208-3113
Richard J. McNeely
Affiliation:
Department of Chemistry, the Materials Research Center, and the Science and Technology Center for High Temperature Superconductivity, Northwestern University, Evanston, Illinois 60208-3113
Anchuan Wang
Affiliation:
Department of Chemistry, the Materials Research Center, and the Science and Technology Center for High Temperature Superconductivity, Northwestern University, Evanston, Illinois 60208-3113
Charles J. Reedy
Affiliation:
Department of Chemistry, the Materials Research Center, and the Science and Technology Center for High Temperature Superconductivity, Northwestern University, Evanston, Illinois 60208-3113
Tobin J. Marks
Affiliation:
Department of Chemistry, the Materials Research Center, and the Science and Technology Center for High Temperature Superconductivity, Northwestern University, Evanston, Illinois 60208-3113
Glenn P. A. Yap
Affiliation:
Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716
Arnold L. Rheingold
Affiliation:
Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716
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Extract

This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

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Articles
Copyright
Copyright © Materials Research Society 1999

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Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth
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