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Epitaxial growth of ZnO films on Si(111)

Published online by Cambridge University Press:  31 January 2011

Ashutosh Tiwari
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
M. Park
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
C. Jin
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
H. Wang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
D. Kumar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
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Abstract

In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AlN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the Raman mode and a red shift of the band-edge photoluminescence peak due to the presence of tensile strain in the film, was observed. Various possible sources for the observed biaxial strain are discussed.

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Rapid Communications
Copyright
Copyright © Materials Research Society 2002

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