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Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates

Published online by Cambridge University Press:  31 January 2011

Jeong Yong Lee
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Korea
Tae Won Kang
Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
Taewhan Kim
National Research Laboratory for Nano Quantum Electronics Devices, Department of Electronics and Communications Engineering, Hanyang University, Seoul 133-791, Korea
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Scanning electron microscopy and transmission electron microscopy images and selected area electron diffraction pattern showed that the one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurzite structures were formed on Si (111) substrates by using hydride vapor-phase epitaxy without a catalyst. Although some stacking faults and inversion domain boundaries existed in the GaN nanorods, few other defects such as threading dislocations were observed. The formation of the facet plane in the N-polar region of the GaN nanorod containing an inversion domain boundary originated from the slow growth rate, followed by the lateral adatom diffusion from the Ga-polar region to reduce the length difference.

Copyright © Materials Research Society 2009

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