Hostname: page-component-5d59c44645-n6p7q Total loading time: 0 Render date: 2024-02-25T19:52:51.833Z Has data issue: false hasContentIssue false

Effects of a Nanothin Al2O3 Cathode Buffer Layer on the Characteristics of Organic Light-emitting Diodes with Sputter-deposited Cathodes

Published online by Cambridge University Press:  31 January 2011

Samil Kho
Affiliation:
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440–746, Republic of Korea
Sungjun Bae
Affiliation:
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440–746, Republic of Korea
Donggeun Jung*
Affiliation:
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440–746, Republic of Korea
*
a)Address all correspondence to this author. e-mail: djung@skku.ac.kr
Get access

Abstract

Effects of an Al2O3 nanothin film between the emitting layer and the sputterdeposited cathode were studied for organic light-emitting diodes (OLEDs) with indium–tin–oxide, NN′-dephenyl-NN′-bis)(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine, tris(8-hydroxyquinoline)aluminum (Alq3), and aluminum (Al) as an anode, a hole transport layer, an emitting layer (EML), and a cathode, respectively. The performance of the OLEDs with sputter-deposited Al cathodes was inferior to that of the OLED with the evaporated Al cathode. However, the insertion of an Al2O3 nanothin film with a proper thickness between the EML and the sputter-deposited Al cathode was effective to alleviate performance degradation of the OLEDs with sputter-deposited Al cathodes in current flow and light emission. It is considered that both protection of EML by Al2O3 from the sputtering damage and higher luminance by the presence of a thin insulating layer between the EML and the cathode alleviated performance degradation of the OLED with an Al2O3 cathode buffer layer. The Al2O3 buffer layer could not alleviate quantum efficiency reduction caused by the sputtering damage.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Wakimoto, T., Murayama, R., Nagamiya, K., Okuda, Y., Nakada, H., and Tohma, T., Society for Information Display Symposium 96 Digest (1996), 849.Google Scholar
2.Service, R.F., Science 273, 878 (1996).CrossRefGoogle Scholar
3.Kalinowski, J., J. Phys. D 32, R179 (1999).CrossRefGoogle Scholar
4.Nguyen, T.P., Joliant, J.P., and Destruel, P., Appl. Surface Science 172, 75 (2001).CrossRefGoogle Scholar
5.Hung, L.S., Thin Solid Films 363, 47 (2000).CrossRefGoogle Scholar
6.Liao, L.S., Hung, L.S., Chan, W.C., Ding, X.M., Sham, T.K., Bello, I., Lee, C.S., and Lee, S.T., Appl. Phys. Lett. 75, 1619 (1999).CrossRefGoogle Scholar
7.Liao, L.S., Fung, M.K., Cheng, L.F., Lee, C.S., Lee, S.T., Inbasekaran, M., Woo, E.P., and Wu, W.W., Appl. Phys. Lett 77, 3191 (2000).CrossRefGoogle Scholar
8.Hung, L.S., Liao, L.S., Lee, C.S., and Lee, S.T., J. Appl. Phys. 86, 4607 (1999).CrossRefGoogle Scholar
9.Raychaudhuri, P.K., Tang, C.W., and Madathil, J.K., Society for Information Display Symposium 01 Digest (2002), p. 529.Google Scholar
10.Li, F., Tang, H., Anderegg, J., and Shinar, J., Appl. Phys. Lett. 70, 1233 (1997).CrossRefGoogle Scholar