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Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation

Published online by Cambridge University Press:  26 November 2012


H. Högberg
Affiliation:
Uppsala University, Department of Inorganic Chemistry, The Ångström Laboratory, P.O. Box 538 SE-75121, Uppsala, Sweden
J. Birch
Affiliation:
Linköping University, Department of Physics, Thin Film Physics Division, SE-58183, Linköping, Sweden
M. P. Johansson
Affiliation:
Linköping University, Department of Physics, Thin Film Physics Division, SE-58183, Linköping, Sweden
L. Hultman
Affiliation:
Linköping University, Department of Physics, Thin Film Physics Division, SE-58183, Linköping, Sweden
U. Jansson
Affiliation:
Uppsala University, Department of Inorganic Chemistry, The Ångström Laboratory, P.O. Box 538 SE-75121, Uppsala, Sweden

Abstract

Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 °C, while the epitaxial growth of VC required 200 °C. Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.


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Copyright
Copyright © Materials Research Society 2001

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Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation
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