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Chemical Vapor Deposition of ZnS:Mn for Thin-Film Electroluminescent Display Applications

Published online by Cambridge University Press:  03 March 2011

Anna W. Topol
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany–SUNY, Albany, New York 12222
Kathleen A. Dunn
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany–SUNY, Albany, New York 12222
Karl W. Barth
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany–SUNY, Albany, New York 12222
Guillermo M. Nuesca
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany–SUNY, Albany, New York 12222
Brian K. Taylor
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany–SUNY, Albany, New York 12222
Katharine Dovidenko
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany–SUNY, Albany, New York 12222
Alain E. Kaloyeros*
Affiliation:
School of NanoSciences and NanoEngineering and UAlbany Institute for Materials, University at Albany–SUNY, Albany, New York 12222
Richard T. Tuenge
Affiliation:
Planar Systems Inc., Beaverton, Oregon 97006
Chris N. King
Affiliation:
Planar Systems Inc., Beaverton, Oregon 97006
*
c)Address all correspondence to this author. e-mail: akaloyeros@uamail.albany.edu
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Abstract

Results are presented from a systematic investigation to design and optimize a low-pressure chemical vapor deposition (CVD) process for manganese-doped zinc sulfide (ZnS:Mn) thin films for electroluminescent (EL) device applications. The CVD process used diethylzinc (DEZ), di-π-cyclopentadienyl manganese (CPMn), and hydrogen sulfide (H2S) as co-reactants and hydrogen (H2) as carrier gas. A design of experiments approach was used to derive functionality curves for the dependence of ZnS:Mn film properties on substrate temperature and flow rates (partial pressures) of DEZ, CPMn, H2S, and H2. Film physical, chemical, structural, and optical properties were examined using Rutherford backscattering spectrometry, dynamic secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, nuclear-reaction analysis, x-ray diffraction, transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. EL measurements were carried out on ZnS:Mn-based dielectric–sulfur–dielectric stacks incorporated into alternating-current thin-film electroluminescent devices. An optimized process window was established for the formation of films with predominantly (0 0 2) orientation, grain size larger than 0.2 μm, and Mn dopant level approximately 0.5 at.%. A brightness of 407 cd/m2 (119 fL) and efficiency of 1.6 lm/W were obtained, as measured at 40 V above threshold voltage and 60 Hz frequency.

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Articles
Copyright
Copyright © Materials Research Society 2004

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