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Broadband infrared luminescence of Cr3+-doped LiInSiO4 phosphors

Published online by Cambridge University Press:  31 January 2011

Jianrong Qiu*
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
a)Address all correspondence to this author. e-mail:
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Cr3+-doped LiInSiO4 phosphors were prepared by a solid-state reaction method. X-ray diffraction measurement was carried out for crystalline phase identification. Absorption, photoluminescence, excitation, and time-resolved spectra were measured to investigate the optical properties of the phosphors. Two broadband near-infrared emissions centered at 920 and 1172 nm were observed. Time-resolved spectra show that the emission at 1172 nm decays more quickly than the emission at 920 nm. The electron spin resonance spectra exhibit a broad resonance signal at g = 1.96 because of exchange-coupled Cr3+ pairs. The value of Dq/B for low and intermediate crystal fields was evaluated. We suggest that Cr3+ incorporated into different octahedral sites of the crystal is responsible for the different near-infrared luminescence.

Copyright © Materials Research Society 2010

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Broadband infrared luminescence of Cr3+-doped LiInSiO4 phosphors
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