In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.

In this paper, significance of studying the nonlinear performance of amplifying reflectarray antenna is clarified by showing nonlinear behavior of the unit cell. Furthermore, the procedure for nonlinear analysis of amplifying reflectarray antenna is described and nonlinear analysis is verified by ADS software simulation. Moreover, a typical amplifying reflectarray antenna is designed considering the nonlinear behavior. Nonlinear analysis of the active aperture-coupled patch unit cell is performed using harmonic balance method considering nonlinear model of the amplifier. Then, the effect of nonlinear element in radiation pattern of the antenna is studied. Passive unit cell is simulated using full-wave analysis method considering infinite array approach, and scattering parameters of the unit cell is obtained. Next, these scattering parameters are transformed to admittance parameters and used in obtaining nonlinear response and harmonic distortion of the unit cell containing amplifier. Obtained results show up to 3.4 dB error in predicting pattern of the antenna with linear modeling of the active element.

A 0.18 µm CMOS Binary Frequency Shift Keying Modulator with a novel frequency synthesizer structure is proposed in this paper. Based on an analog adder technique being the backbone of the synthesizer, this prototype demonstrates a compact modulator with low complexity, which achieves 1 Mbps at 400 MHz while dissipating 3.1 mW at 1.5 V supply. The proposed design is ideal for biomedical sensor network systems including distributed wearable body area network.

In this study, we design a differential CMOS power amplifier using a 180-nm SOI RFCMOS process for 802.11n (64-QAM, 20 MHz bandwidth, 9.6 dB peak to average power ratio (PAPR)) applications. To minimize the chip area and mismatch in differential signals, we propose a layout method with an inter-stage matching network using a split inductor. By virtue of the symmetrical layout of the proposed split inductor, the mismatch in the differential signals is minimized, while the interconnection lines between the driver and power stages are shortened to minimize the overall chip area and the loss induced by the resistive parasitic components. The designed power amplifier is measured using a wireless local area network (WLAN) 802.11n signal to verify the feasibility of the proposed layout technique. The power amplifier achieved 20.34 dBm output power, while the measured EVM for the 802.11n applications is satisfied. From the measured results, we successfully prove the feasibility of the proposed power amplifier.

A novel scheme for power-combined frequency tripler adopting 2N diodes is proposed in this work. Even mode coupled suspended substrate stripline is used to divide and recombine the input and output power. The circuits of the tripler are printed on both sides of the substrate, with N diodes on the front side and the other N diodes on the back side. The front diodes and back diodes are in anti-parallel connection, and DC biased separately to increase the bandwidth and power capacity. Three Q-band prototypes with two, four, and six diodes are fabricated and tested. The output compression powers at output frequency of 43.5 GHz for two/four/six-diode tripler are 9.2, 11, and 12 dBm, respectively. Power capacity is improved with the proposed tripler. Optimum DC bias is also discussed in this work, and it is found that it first increases with drive power, and then drops when large drive power applied because of the increased series resistance of the diode due to high junction temperature.

In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky diode based on finite element method and lumped equivalent circuit parameter extraction. Afterward, we use the developed model to investigate the effect of design parameters of the Schottky diode on parasitic capacitive and resistive elements. Based on this model, device design has been improved by deep-trench formation in the substrate and using a closed-loop junction to reduce the amount of parasitic capacitance and spreading resistance, respectively. The results indicate that cut-off frequency can be improved from 4.1 to 14.1 THz. Finally, a scaled version of the diode is designed, fabricated, and well characterized to verify the validity of this modeling approach.

This paper presents the modeling, manufacturing, and testing of a micro-electromechanical system (MEMS)-based LC tank resonator suitable for low phase-noise voltage-controlled oscillators (VCOs). The device is based on a variable MEMS varactor in series with an inductive coplanar waveguide line. Two additional parallel stubs controlled by two ohmic MEMS switches have been introduced in order to increase the resonator tunability. The device was fabricated using the FBK-irst MEMS process on high resistivity (HR) silicon substrate. Samples were manufactured with and without a 0-level quartz cap. The radio frequency characterization of the devices without 0-level cap has shown a continuous tuning range of 11.7% and a quality factor in the range of 33–38. The repeatability was also tested on four samples and the continuous tuning is 11.7 ± 2%. Experimental results on the device with a 0-level cap, show a frequency downshift of about 200 MHz and a degradation of the quality factor of about 20%. This is, most likely, due to the polymeric sealing ring as well as to a contamination of the ohmic contacts introduced by the capping procedure. A preliminary design of a MEMS-based VCO was performed using Advanced Design System and a hardwired prototype was fabricated on Surface Mount Technology on RO4350 laminate. The prototype was tested resulting in a resonance frequency of 5 GHz with a phase noise of −105 and −126 dBc at 100 KHz and 1 MHz, respectively, and a measured output power of −1 dBm.

This paper presents the performance study of a 248 GHz voltage-controlled hetero-integrated signal source using indium phosphide (InP)-on-bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The source consists of a voltage controlled oscillator (VCO) in 0.25 µm BiCMOS technology and a frequency multiplier in 0.8 µm transferred-substrate InP-heterojunction bipolar transistor technology, which is integrated on top of the BiCMOS monolithic microwave integrated circuit in a wafer-level based benzocyclobutene bonding process. The vertical transitions from BiCMOS to InP in this process exhibit broadband properties with insertion losses below 0.5 dB up to 325 GHz. The VCO operates at 82.7 GHz with an output power of 6 dBm and the combined circuit delivers −9 dBm at 248 GHz with 1.22% tuning range. The phase noise of the combined circuit is −85 dBc/Hz at 1 MHz offset. The measured output return loss of the hetero-integrated source is >10 dB within a broad frequency range. This result shows the potential of the hetero integrated process for THz frequencies.

In this paper, a 2.45-GHz wideband harmonic rejection rectenna for wireless power transfer is proposed. The rectenna comprises a microstrip-fed circular ring slot antenna (CRSA) and a series-parallel rectifier (SPR). A compact micro strip resonant cell is inserted into the CRSA so that the harmonic suppression over a wide bandwidth (3–8 GHz) can be obtained. The radio-frequency (RF)–DC conversion efficiency of the SPR is improved effectively by loading a proper compensating inductance, especially under the low input power levels. Furthermore, the proposed rectenna can easily achieve large-scale rectenna arrays using its simple structure. The adopted rectenna fabricated on a low cost Taconic RF-35 substrate has been measured. By up to 3rd-order harmonic rejection, the efficiency of the rectenna can achieve 70.2% with the optimum load resistance 1 kΩ. Good agreement among the calculated, simulated, and measured rectenna is observed.

In this paper, we present a novel flexible moon-shaped slot implantable antenna for neural recording systems and head implants. It covers both medical Industrial, Scientific and Medical band (2.45 GHz) and impulse ratio ultra-wideband (IR-UWB) frequency range (3.1–10.6 GHz) for forward and backward telemetry applications. It has a simple and miniaturized structure in comparison with the antennas reported in the other researches. Furthermore, for adapting with natural curvature of human head, a flexible substrate is chosen with a good antenna performance under the bending. The proposed antenna is analyzed in a multi-layer box model of head tissues to speed up the antenna design procedures. On the basis of the simulation results, we achieved the good impedance matching over the desired frequency range (S11 below −10 dB). Far-field characteristics are considered, as well. The directivity is in suitable range for UWB short-range communications and its mean value is 3.84 dBi. Finally, to take into account patents’ safety regulations and the effective isotropic radiated power restriction in the desired frequency range, the maximum power of transmitter has been calculated. A phantom containing a mixture of sugar and water is used to test the fabricated antenna. The measured parameters are well matched to the full-wave simulation results.

A compact dual-band microstrip bandpass filter (BPF) is presented for application at the frequencies 2.4 and 5.84 GHz. The proposed main resonator consists of two L-shaped resonators. To improve the upper-stopband of the proposed filter, modified U-Shaped resonators are accepted. The operation mechanism of the filter is investigated based on proffered equivalent-circuit model and transformation function. The sketched dual-band BPF attends the insertion loss less than 0.1 and 0.4 dB Also the return loss is 26 and 28 dB at 2.4 and 5.84, respectively. This proffered filter structure is proper for Bluetooth and wireless local area networks and other wireless communication systems. An overall good agreement between measured and simulated results is observed.

In building highly efficient transmitters of today, one is forced to sacrifice linearity for efficiency. Some of the highest power amplifier efficiency figures are reported by envelope tracking (ET) amplifiers. These amplifiers can generate strong higher-order harmonics, which can lead to interference with receivers operating at the harmonic frequencies. Using non-linear interference cancellation, we can help to remove the interference being caused in those receivers. This paper looks at the problem of modeling the third and second-order harmonic emission from an ET amplifier. It derives the non-linear kernel for estimating such interference. This kernel has been rigorously expanded to show its correlation with the various harmonics and its effectiveness in predicting the harmonic content. We then set up an envelope amplifier test-bench to capture harmonic signal content and cancel it using the derived kernel model. The experiment yields excellent agreement with theory and provides a validation of the system and concept.

The design and characterization of a broadband 20–480 GHz continuously tuneable on-chip spectrometer based on non-linear transmission lines in 65-nm CMOS technology is presented. The design procedure of the sampler that detects the ultra-broadband signal from the transmitter in time and frequency domain is described in detail. It consists of a non-linear transmission line, a passive pulse differentiator and a high-speed sample and hold-circuit. The relevance of the layout of the Schottky diodes in the sampler with a maximum RC-cutoff frequency of 430 GHz is described. Time domain and frequency domain measurements are presented to characterize the 480 GHz sampler bandwidth as well as the 3.1 ps sampler rise time. A signal to noise ratio of 90 dB at 100 GHz, 70 dB at 200 GHz and more than 30 dB at 480 GHz is reached. Two implementation of the spectrometer with antennas are presented, one with an on-chip antenna and one in a hybrid package. The antenna-less on-chip implementation of the transmitter and sampler requires no external lenses and is miniaturized to an area of 3 mm2. Future applications include analysis of fluids in microfluidic packages or droplet analysis in bio-medical or pharmaceutical applications.

An axially slotted cylinder coated with two different types of inhomogeneous coating layers is considered. These inhomogeneous coatings have decreasing permittivity profiles. The effects of various parameters of these coatings upon the gain pattern have been investigated using numerical simulations. It is studied that the gain at certain observation angles can be enhanced or diminished by controlling the inhomogeneity parameters of these considered profiles. It is further studied that for specific type of considered inhomogeneous coatings, the forward direction gain can be enhanced significantly.

Multiple Input Multiple Output (MIMO) Radar has many advantages compared with conventional Radars including improved target parameters estimation, improved angular resolution while keeping a small number of antennas. Nevertheless, these advantages can be obtained when probing simultaneously the scattering matrix with orthogonal transmit signals. Recently, a passive orthogonal waveform generation technique was introduced using a 1 × M ports Mode-Mixing microwave cavity whose transfer functions are uncorrelated. This approach makes MIMO Radar system able to satisfy transmit beamforming constraint with a cost-efficient architecture. In this paper, more conceptual clarifications are brought and the orthogonality metrics are assessed. Furthermore, the proposed method is experimentally compared with a conventional MIMO Radar based on frequency hopping waveforms.

Design guidelines for fractional-N phase-locked loops with a high spectral purity of the output signal are presented. Various causes for phase noise and spurious tones (spurs) in integer-N and fractional-N phase-locked loops (PLLs) are briefly described. These mechanisms include device noise, quantization noise folding, and noise coupling from charge pump (CP) and reference input buffer to the voltage-controlled oscillator (VCO) and vice versa through substrate and bondwires. Remedies are derived to mitigate the problems by using proper PLL parameters and a careful chip layout. They include a large CP current, sufficiently large transistors in the reference input buffer, linearization of the phase detector, a high speed of the programmable frequency divider, and minimization of the cross-coupling between the VCO and the other building blocks. Examples are given based on experimental PLLs in SiGe BiCMOS technologies for space communication and wireless base stations.

In this paper, an amplitude shift keying (ASK) demodulator with 100% modulation depth is proposed. In order to achieve the higher power and wider reading range the designed ASK demodulator works in the ultra-high frequency. In this design, the average detector and voltage divider are used in order to define the appropriate threshold voltage level for the radio frequency input signal which leads to the accurate data detecting even at long distances between the tag and reader. In addition, for diminishing the power dissipation of the proposed demodulator, an enable input is used in the buffer and comparator. This circuit is simulated in 0.18 μm complementary metal–oxide–semiconductor (CMOS) technology with Cadence software. Its power dissipation and chip area are 3.9 nW and 0.0025 mm2, respectively.