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X-band T/R-module front-end based on GaN MMICs

  • Patrick Schuh (a1), Hardy Sledzik (a1), Rolf Reber (a1), Andreas Fleckenstein (a1), Ralf Leberer (a1), Martin Oppermann (a1), Rüdiger Quay (a2), Friedbert van Raay (a2), Matthias Seelmann-Eggebert (a2), Rudolf Kiefer (a2) and Michael Mikulla (a2)...

Abstract

Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).

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Corresponding author

Corresponding author: P. Schuh Email: patrick.schuh@ieee.org

References

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Keywords

X-band T/R-module front-end based on GaN MMICs

  • Patrick Schuh (a1), Hardy Sledzik (a1), Rolf Reber (a1), Andreas Fleckenstein (a1), Ralf Leberer (a1), Martin Oppermann (a1), Rüdiger Quay (a2), Friedbert van Raay (a2), Matthias Seelmann-Eggebert (a2), Rudolf Kiefer (a2) and Michael Mikulla (a2)...

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