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A new GaN-based high-speed and high-power switching circuit for envelope-tracking modulators

Published online by Cambridge University Press:  19 December 2013

Patrick Augeau ,
Philippe Bouysse ,
Audrey Martin ,
Jean Michel Nebus ,
Raymond Quéré ,
Luc Lapierre ,
Olivier Jardel  and
Stéphane Piotrowicz
Patrick Augeau
Affiliation:
XLIM C2S2, 123, Avenue Albert Thomas, 87000 Limoges Cedex, France. Phone: +33 555 457 295
Philippe Bouysse*
Affiliation:
XLIM C2S2, 123, Avenue Albert Thomas, 87000 Limoges Cedex, France. Phone: +33 555 457 295
Audrey Martin
Affiliation:
XLIM C2S2, 123, Avenue Albert Thomas, 87000 Limoges Cedex, France. Phone: +33 555 457 295
Jean Michel Nebus
Affiliation:
XLIM C2S2, 123, Avenue Albert Thomas, 87000 Limoges Cedex, France. Phone: +33 555 457 295
Raymond Quéré
Affiliation:
XLIM C2S2, 7, rue Jules Vallès, 19100 Brive, France
Luc Lapierre
Affiliation:
CNES, 18 Av. Edouard Belin, 31055 Toulouse, France
Olivier Jardel
Affiliation:
III-V Lab, route de Nozay, 91460 Marcoussis, France
Stéphane Piotrowicz
Affiliation:
III-V Lab, route de Nozay, 91460 Marcoussis, France
*
Corresponding author: P. Bouysse Email: philippe.bouysse@unilim.fr
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Abstract

In this paper, we report a new high-speed and high-power switching circuit based on GaN HEMT's. The elementary switching cell, composed of two GaN HEMT's and two resistors, acts like a power threshold comparator with high-output voltage. Theoretical analysis of static and dynamic circuit operation points out the dependence of efficiency and switching speed to the main circuit elements. Four switching cells are then combined together thanks to SiC Schottky diodes to design a multi-level power switch that can be used as a power supply modulator for envelope tracking power amplifiers. The designed four-level supply modulator, based on Nitronex GaN HEMT's, exhibits more than 75% of efficiency for an envelope signal up to 4 MHz, a switching frequency of 20 MHz and output voltages in the range of 12–30 V.

Keywords

Power Amplifiers and LinearizersCircuit Design and Applications
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 1: IJMWT Special Issue on the 2013 National Microwave Days in France , February 2014 , pp. 13 - 21
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

REFERENCES

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