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InAlN/GaN HEMTs based L-band high-power packaged amplifiers

  • Olivier Jardel (a1), Jean-Claude Jacquet (a1), Lény Baczkowski (a1), Dominique Carisetti (a2), Didier Lancereau (a1), Maxime Olivier (a3), Raphaël Aubry (a1), Marie-Antoinette di Forte Poisson (a1), Christian Dua (a1), Stéphane Piotrowicz (a1) and Sylvain L. Delage (a1)...

Abstract

This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.

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Corresponding author

Corresponding author: O. Jardel Email: olivier.jardel@3-5lab.fr

References

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Keywords

InAlN/GaN HEMTs based L-band high-power packaged amplifiers

  • Olivier Jardel (a1), Jean-Claude Jacquet (a1), Lény Baczkowski (a1), Dominique Carisetti (a2), Didier Lancereau (a1), Maxime Olivier (a3), Raphaël Aubry (a1), Marie-Antoinette di Forte Poisson (a1), Christian Dua (a1), Stéphane Piotrowicz (a1) and Sylvain L. Delage (a1)...

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