Kim, K.-W.; Kwack, J.-Y.; Cho, S.: 1 KW solid state power amplifier for L-band radar system, in 2011 Third Int. Asia-Pacific Conf. Synthetic Aperture Radar (APSAR), 1–4.
et al. : C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE, in 2009 IEEE MTT-S Int. Microwave Symp. Digest (MTT’09), 1265–1268.
et al. : An S-band GaN on Si high power amplifier with 170 W output power and 70% drain efficiency, in 2012 IEEE Compound Semiconductor Integrated Circuit Symp. (CSICS), 1–4.
et al. : Internally matched GaN FET at C-band with 220 W output power and 56% power added efficiency, in 2012 Asia-Pacific Microwave Conf. Proc. (APMC), 358–360.
et al. : 230 W C-band GaN-FET power amplifier. Electron. Lett., 43 (17) (2007), 927–929.
Kwack, J.-Y.; Kim, K.-W.; Cho, S.: l kW S-band solid state radar amplifier, in 2011 IEEE 12th Annual Wireless and Microwave Technology Conf. (WAMICON), 1–4.
et al. : A high efficiency 140 W power amplifier based on a single GaN HEMT device for space applications in L-band, in 2012 Seventh European Microwave Integrated Circuits Conf. (EuMIC), 127–130.
Krishnamurthy, K.; Poulton, M.J.; Martin, J.; Vetury, R.; Brown, J.D.; Shealy, J.B.: A 250 W S-Band GaN HEMT amplifier, in CSIC 2007 IEEE Compound Semiconductor Integrated Circuit Symp., 2007, 1–4.
Yamanaka, K.; Kimura, M.; Chaki, S.; Nakayama, M.; Hirano, Y.: S-band internally harmonic matched GaN FET with 330 W output power and 62% PAE, in 2011 European Microwave Integrated Circuits Conf. (EuMIC), 244–247.
Joh, J.; del Alamo, J. A.: Mechanism for electrical degradation of GaN high-electron mobility transistors, in IEDM Technical Digest, 2006, 415–418.
et al. : Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors. IEEE Trans. Device Mater. Reliab., 8 (2) (2008), 240–247.
Cen, Y.F.; McCann, D.: 100 W GaN PA in low cost 3 × 6 mm plastic DFN package providing the smallest “True SMT” footprint for Pulse RADAR applications, in Proc. Seventh European Microwave Integrated Circuits Conf., Amsterdam, The Netherlands, 29–30 October 2012, 333–336.
et al. : New qualified industrial AlGaN/GaN HEMT process: power performances & reliability figures of merit, in Proc. Seventh European Microwave Integrated Circuits Conf., Amsterdam, The Netherlands, 29–30 October 2012, 317–320.
et al. : InAlN/GaN HEMTs for operation in the 1000°C regime: a first experiment. IEEE Electron Device Lett., 3 (7) (2012), 385–387.
et al. : Ultrathin body InAlN/GaN HEMTs for high-temperature 600°C electronics. IEEE Electron Device Lett., 34 (4) (2013), 496–498.
Kuzmik, J.: Material and device issues of InAlN/GaN heterostructures, in 2012 Ninth Int. Conf. Advanced Semiconductor Devices & Microsystems (ASDAM), 11–15 November 2012, 45–50.
et al. : Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors. J. Appl. Phys., 106 (12) (2009), 124503.
et al. : AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz. IEEE Electron Device Lett., 31 (1) (2010), 11–13.
et al. : High power Ka-band performance of AlInN/GaN HEMT with 9.8-nm thin barrier. IEEE Electron Device Lett., 31 (1) (2010), 2–4.
et al. : First demonstration of AlInN/GaN HEMTs amplifiers at K band, in 2012 IEEE MTT-S Int. Microwave Symp. Digest (MTT), 2012, 1–3.
et al. : 160 W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management, in 2012 IEEE Compound Semiconductor Integrated Circuit Symp. (CSICS), 2012, 1–4.
et al. : Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors. J. Appl. Phys., 110 (2011), 084501; doi: 10.1063/1.3647589.
et al. : An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR. IEEE Trans. Microw. Theory Tech., 55 (12) (part 2) (2007), 2660–2669.
et al. : Infrared thermography developments for III-V transistors and MMICs, in ISTFA 2011: Conf. Proc. from the 37th Int. Symp. Testing and Failure Analysis (ASM International), November 2011, 230–233.