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A homodyne transceiver MMIC using SiGe:C technology for 60 GHz wireless applications

Published online by Cambridge University Press:  19 April 2011

Hans Peter Forstner ,
Markus Ortner ,
Ludger Verweyen  and
Herbert Knapp
Hans Peter Forstner*
Affiliation:
Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany.
Markus Ortner
Affiliation:
Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany.
Ludger Verweyen
Affiliation:
Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany.
Herbert Knapp
Affiliation:
Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany.
*
Corresponding author: H. P. Forstner Email: hans-peter.forstner@infineon.com
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Abstract

A highly integrated transceiver microwave monolithic integrated circuit (MMIC) manufactured in a 200-GHz SiGe:C production technology is presented, applicable for sensing- and broadband communication applications. To simplify the analog frontend, the fully differential design is based on a homodyne architecture. It comprises an LO signal generation unit based on a wideband 60 GHz fundamental Voltage Controlled Oscillator (VCO) and an on-chip prescaler, covering the full operational frequency band of 57–64 GHz. Within this bandwidth, the upconverter exhibits an upconversion gain of 23.6–26.4 dB and a maximum output-referred 1-dB compression point of 14 dBm. The downconverter provides a Double Sideband (DSB) noise figure of 9–12 dB with a downconversion gain of 37–71 dB. On chip AC-coupling of the receiver IF-output with a lower −3 dB cut-off frequency as low as 16 kHz eliminates mixer DC-offsets and enables on-chip Intermediate Frequency (IF) amplification. The whole transceiver MMIC draws a current of 415 mA from a single 3.3 V supply and requires few components externally to the chip.

Keywords

60 GHzSiGe:CMicrowave monolithic integrated circuit (MMIC)TransmitterReceiverTransceiverUpconverterDownconverter
Type
Research Article
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Special Issue 2: 60 GHz Wireless Communication Circuits and Systems , April 2011 , pp. 147 - 155
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

REFERENCES

[1]Floyd, B.: Short course: SiGe BiCMOS transceivers for millimeter-wave in Proc. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), September 2007.Google Scholar
[2]Pinel, S. et al. : A 90 nm CMOS 60 GHz radio, in IEEE ISSCC Dig., February 2008, 130–131.Google Scholar
[3]Grass, E. et al. : 60 GHz SiGe-BiCMOS radio for OFDM transmission, in IEEE Int. Symp. on Circuits and Systems, 2007, ISCAS 2007, 1979–1982.CrossRefGoogle Scholar
[4]Wang, C.H. et al. : A 60 GHz transmitter with integrated antenna in 0.18 µm SiGe BiCMOS technology, in IEEE Int. Solid-State Circuits Conf. ISSCC, September 2006.Google Scholar
[5]Tomkins, A.; Aroca, R.A.; Yamamoto, T.; Nicolson, S.T.; Doi, Y.; Voinigescu, S.P.: A zero-IF 60 GHz 65 nm CMOS transceiver with direct BPSK modulation demonstrating up to 6 Gb/s data rates over a 2 m wireless link. IEEE J. Solid-State Circuits, 44(8), (2009), pp. 2085–2099.CrossRefGoogle Scholar
[6]Marcu, C. et al. : A 90 nm CMOS low-power 60 GHz transceiver with integrated baseband circuitry, in IEEE Int. Solid-State Circuits Conf., Digest of Technical Papers, February 2009, 314–315.CrossRefGoogle Scholar
[7]Forstner, H.P.; Ortner, M.; Verweyen, L.: A fully integrated homodyne upconverter MMIC in SiGe:C for 60 GHz wireless applications, in 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Phoenix, AZ, January 2011.CrossRefGoogle Scholar
[8]Ortner, M.; Forstner, H.P.; Verweyen, L.: A fully integrated homodyne downconverter MMIC in SiGe:C for 60 GHz wireless applications, in 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Phoenix, AZ, January 2011.CrossRefGoogle Scholar
[9]Böck, J. et al. : SiGe bipolar technology for automotive radar applications, in Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), September 2004, 84–87.Google Scholar
[10]Li, H.; Rein, H.-M.; Suttorp, T.; Böck, J.: Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive radar systems and applications around 100 GHz. IEEE J. Solid-State Circuits, 39(10), (2004), 1650–1658.CrossRefGoogle Scholar
[11]Notten, M.G.M.; Veenstra, H.: 60 GHz quadrature signal generation with a single phase VCO and polyphase filter in a 0.25 µm SiGe BiCMOS technology, in Proc. of the Bipolar/BiCMOS Circuits and Technology Meeting, Monterey, CA, October 2008.CrossRefGoogle Scholar
[12]Tong, Z.; Stelzer, A.: A millimeter-wave transition from microstrip to waveguide using a differential microstrip antenna, in Proc. 40th European Microwave Conf., Paris, September 2010.Google Scholar
[13]Razavi, B.: Design considerations for direct-conversion receivers. Circuits and systems II: analog and digital signal processing. IEEE Circuits Syst. Soc., 44(6), (1997), 428–435.Google Scholar