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A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

  • Dirk Schwantuschke (a1), Christian Haupt (a1), Rudolf Kiefer (a1), Peter Brückner (a1), Matthias Seelmann-Eggebert (a1), Axel Tessmann (a1), Michael Mikulla (a1), Ingmar Kallfass (a1) (a2) and Rüdiger Quay (a1)...

Abstract

In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.

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Corresponding author

Corresponding author: D. Schwantuschke Email: dirk.schwantuschke@iaf.fraunhofer.de

References

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Keywords

A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

  • Dirk Schwantuschke (a1), Christian Haupt (a1), Rudolf Kiefer (a1), Peter Brückner (a1), Matthias Seelmann-Eggebert (a1), Axel Tessmann (a1), Michael Mikulla (a1), Ingmar Kallfass (a1) (a2) and Rüdiger Quay (a1)...

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