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Millimeter and Submillimeterwave Receivers

Published online by Cambridge University Press:  12 April 2016

T.G. Phillips
T.G. Phillips*
Affiliation:
California Institute of Technology320-47 Pasadena, CA 91125, U.S.A.

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Various types of receivers can be used for millimeter and submillimeterwave astronomy. The choices are amplifiers or mixer detectors. For the millimeter band, in the past, maser and paramp devices have been successfully used, but in the last few years HEMT amplifiers have proved to be the best option up to about 40 GHz, because they are inexpensive, quite low noise (about 1-2 K/GHz), stable and wideband. However, currently, above ~40 GHz the best performance is obtained from mixer receivers and this review will address that topic only. When used in either interferometers or in single dish spectroscopy, the receivers measure simultaneously the amplitude and phase of the astronomical signal and are therefore fundamentally limited by the quantum noise inherent in the measurement process, which increases linearly with frequency. A receiver which achieves a noise temperature within a factor of 10 of this limit is considered to be well optimized, so that the usual criterion for the noise temperature characterizing a single side-band receiver is that it should be ≲ 10hv/k or equivalently ≲ 0.5 K/GHz.

Type
2. Technical Innovations
Information
International Astronomical Union Colloquium , Volume 140: Astronomy with Millimeter and Submillimeter Wave Interferometry , 1994 , pp. 68 - 77
Copyright
Copyright © Astronomical Society of the Pacific 1994

References

Blundell, R., Carter, M.J., Gundlach, K.H., 1988, Int. J. IR&MM Waves 9,361.Google Scholar
Blundell, R. & Tong, C.Y.E., 1992, Proc. IEEE 80, 1702.CrossRefGoogle Scholar
Büttenbach, T.H., Miller, R.E., Wengler, M.J., Watson, D.M. & Phillips, T.G., 1988, IEEE Trans. MTT 36, 1720.Google Scholar
Büttgenbach, T.H., LeDuc, H.G., Maker, P.D. & Phillips, T.G., 1992, IEEE Trans. Appl. Supercond. 2, 165.CrossRefGoogle Scholar
Büittgenbach, T.H., 1993, IEEE MTT, in press.Google Scholar
Claassen, J.H. & Richards, P.L., 1978, J. Appl. Phys. 49, 4130.CrossRefGoogle Scholar
Crowe, T.W., Mattauch, R.J., Roeser, H.P., Bishop, W.L., Peatman, W.C.B. & Liu, X., 1992, Proc. IEEE 80, 1827.CrossRefGoogle Scholar
Dayem, A.H. & Martin, R.J., 1962, Phys. Rev. Lett. 8, 246.CrossRefGoogle Scholar
DeLange, G. et al. 1992, Proc. 3rd Int. Symp. Space Teraherz Tech.Google Scholar
Dolan, G.J., Phillips, T.G. & Woody, D.P., 1979, Appl. Phys. Lett. 34, 347.CrossRefGoogle Scholar
Ellison, B.N. & Miller, R.E., 1987, Int. J. IR&MM Waves 8, 608 Google Scholar
Honingh, E.C. et al., 1992, Proc 3rd Int. Symp. Space Terherz Tech.Google Scholar
Huggins, H.A. & Gurvitch, M., 1985, J. Appl. Phys 57, 2103.CrossRefGoogle Scholar
Hunt, B.D., LeDuc, H.G., Cypher, S.R. & Stern, J.A., 1989, Appl. Phys. Lett. 55, 81.CrossRefGoogle Scholar
Kerr, A.R. & Pan, S.K., 1990, Int. J. IR&MM Waves 11, 1169 CrossRefGoogle Scholar
Kerr, A.E., Pan, S.K., Lichtenberger, A.W. & Lea, D.M., 1992, IEEE Mic &Guided Wave Lett. 2, 1051.Google Scholar
Kooi, J.W., Chan, M., Phillips, T.G., Bumble, B. & LeDuc, H.G., 1992, IEEE MTT 40, 812.CrossRefGoogle Scholar
LeDuc, H.G., Stern, J.A., Thakoor, S. Khanna, S., 1987, IEEE Trans. Mag. MAG-23, 863.CrossRefGoogle Scholar
Penzias, A.A., & Burrus, C.A., 1973. Ann. Rev. Aston. Ap. 11, 51.CrossRefGoogle Scholar
Phillips, T.G. & Jefferts, K.B., 1973, Rev. Sci. Instr. 44, 1009.CrossRefGoogle Scholar
Phillips, T.G. & Woody, D.P., 1982, Ann. Rev. Astron. Ap. 20, 285.CrossRefGoogle Scholar
Richards, P.L., Shen, T.M., Harris, R.E. & Lloyd, F.L., 1979, Appl. Phys. Lett. 34, 345.Google Scholar
Schoelkopf, R.J., Phillips, T.G. & Zmuidzinas, J., 1993, IEEE Trans. Appl. Supercond., in press.Google Scholar
Shoji, A., Aoyagi, M., Kosáka, S., Shinoki, F. & Hayakawa, H., 1985, Appl, Phys, Lett. 49, 1098.Google Scholar
Taur, Y. & Richards, P.L., 1978, Appl. Phys. Lett. 32, 775.CrossRefGoogle Scholar
Tucker, R.J., 1979, IEEE QE 15, 1234.CrossRefGoogle Scholar
Tucker, J.R. & Feldman, J.J., 1985, Revs. Mod. Phys. 57, 1055.CrossRefGoogle Scholar
Walker, C.K., Kooi, J.W., Chan, M., LeDuc, H.G., Carlstrom, J.E. & Phillips, T.G., 1992, Int. J. IR&MM Waves 13, 785.CrossRefGoogle Scholar
Weinreb, S. & Kerr, A.R., 1973, IEEE J. Solid-State Circuits 8, 58.CrossRefGoogle Scholar
Wengler, M.J., Woody, D.P., Miller, R.E. & Phillips, T.G., 1985 Int. J. IR&MM Waves 6, 697.CrossRefGoogle Scholar
Yang, J.X., Agahi, F., Dai, D., Grammer, W., Lau, K.M. & Yngvesson, K.S., 1991, Semicond. Device Symp. U. Virginia. Google Scholar
Zmuidzinas, J. & LeDuc, H.G., 1992, IEEE. Trans. MTT 40, 1797.Google Scholar