Hostname: page-component-7c8c6479df-hgkh8 Total loading time: 0 Render date: 2024-03-28T09:40:44.878Z Has data issue: false hasContentIssue false

Nano-scale MOSFET device modelling with quantum mechanical effects

Published online by Cambridge University Press:  01 November 2006

ELLIS CUMBERBATCH
Affiliation:
School of Mathematical Sciences, Claremont Graduate University, Claremont, CA 91711, USA
SHIGEYASU UNO
Affiliation:
School of Mathematical Sciences, Claremont Graduate University, Claremont, CA 91711, USA
HENOK ABEBE
Affiliation:
USC Information Sciences Institute, MOSIS Service, 4676 Admiralty Way, Marina del Rey, CA 90292, USA email: abebeh@mosis.org

Abstract

The continuing down-scaling trend of CMOS technology has brought serious deterioration in the accuracy of the SPICE (Simulation Program with Integrated Circuit Emphasis) device models used in the design of chip functions. This is due to in part to hot electron and quantum effects that occur in modern nano-scale MOSFET devices [13, 25, 28, 33, 34]. The focus of this paper is on modeling quantum confinement effects based on the Density-Gradient (DG) model [6, 9, 14], for application in SPICE. Analytic 1-D quantum mechanical (QM) effects correction formulae for the MOSFET inversion charge and electrostatic potential are derived from the DG model using matched asymptotic expansion techniques. Comparison of these new models with numerical data shows good results.

Type
Papers
Copyright
2006 Cambridge University Press

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)