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Crystallinity estimation of area-selective Ge epitaxial layer grown on Si substrate by means of high-resolution X-ray microdiffraction

Published online by Cambridge University Press:  16 November 2010

Y. Tsusaka ,
H. Takano ,
Y. Kagoshima ,
J. Matsui ,
S. Park ,
Y. Ishikawa  and
K. Wada
Y. Tsusaka*
Affiliation:
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
H. Takano
Affiliation:
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
Y. Kagoshima
Affiliation:
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
J. Matsui
Affiliation:
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
S. Park
Affiliation:
Graduate School of Engineering, The University of Tokyo, Hongo, Bunkyo, Tokyo 113-8656, Japan
Y. Ishikawa
Affiliation:
Graduate School of Engineering, The University of Tokyo, Hongo, Bunkyo, Tokyo 113-8656, Japan
K. Wada
Affiliation:
Graduate School of Engineering, The University of Tokyo, Hongo, Bunkyo, Tokyo 113-8656, Japan
*
†Email address for correspondence:tsusaka@sci.u-hyogo.ac.jp
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Abstract

Crystallinity of area-selective Ge layer with a (0 0 1) surface grown on Si substrate has been investigated by means of diffractometry using a parallel X-ray microbeam. The measured lattice parameters of 〈0 0 1〉 direction were about 0.17% smaller than that of bulk Ge crystal. This tensile strain value was almost the same as the simulated ones that used the finite-element method.

Type
Contributed paper
Information
Diamond Light Source Proceedings , Volume 1 , Issue SRMS-7 , October 2010 , e119
Copyright
Copyright © Diamond Light Source Ltd 2010

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References

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