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X-Ray Investigations of Spinel Substrates

Published online by Cambridge University Press:  06 March 2019

J. E. A. Maurits
Affiliation:
Union Carbide, Crystal Products San Diego, California 92123
A. M. Hawley
Affiliation:
Union Carbide, Crystal Products San Diego, California 92123
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Abstract

Recent advances in MOS integrated circuit technology have opened new, high-volume applications utilizing epitaxial silicon-on- insulating substrates. To provide good quality heteroepitaxial silicon films for the semiconductor industry, a development program has been established to improve both the crystalline quality and the fabrication techniques for the most promising current substrate, magnesium aluminum spinel.

The role of X-ray diffraction techniques in the investigation of crystal quality, substrate surface quality, and epitaxial film quality are discussed, and results interpreted as the program is traced from crystal growth to epitaxial film analysis.

Type
Research Article
Copyright
Copyright © International Centre for Diffraction Data 1971

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References

1. Manasevit, H. M. and Forbes, D. H., “Single Crystal Silicon on Spinel”, Journal Appl. Physics 37(2) 734739 (1966).Google Scholar
2. Cullen, G. W., “The Preparation of Properties of Chemically Vapor Deposited Silicon on Sapphire and Spinel”, Journal of Crystal Growth 9 107125 (1971).Google Scholar
3. Wang, C. C., et al, “Single Crystal Spinel for Electronic Application”, Technical Report AFML-TR-68-320 (1968).Google Scholar
4. Manasevit, H. M., et al, Transactions Metallurgical Society AIME 236 (1966).Google Scholar
5. Alford, W. J., Stephens, D. L., “Chemical Polishing and Etching Techniques for Al2O3 Single Crystals”, Journal American Ceram. Soc. 46(4) 193194 (1963).Google Scholar
6. McBrayer, R. D., et al, “Chemical Etching of Defect Structures in Alumina-Rich Spinel Single Crystals”, Journal American Ceram. Soc. 46(10) 504505 (1963).Google Scholar
7. Green, J. M., “The Etch Rate and Deterioration of Magnesium Aluminate Spinel in Hydrogen.” Presented at the Electrochemical Society Meeting, Washington, D. C. 1971.Google Scholar