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X-Ray Diffraction Analysis of Simultaneous Changes in Stress and Dislocation Densities in Thin Films

  • A. C. Vermeulen (a1), R. Delhez (a1), Th.H. de Keijser (a1) and E. J. Mittemeijer (a1)

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A method has heen developed to determine the dislocation configuration in a polycrystalline specimen from the direction dependence of line broadening. The method is based on an analytical expression for the integral breadth due to microstrain from sets of parallel edge and/or screw dislocations on the specific slip systems. Analysis of the x-ray-diffraction measurements obtained from poly crystalline aluminium layers, deposited onto silicon wafers and subsequently annealed and cooled to room temperature, shows unequal densities and unequal changes of densities of dislocations with the Burgers vector parallel and with the Burgers vector inclined with respect to the surface of the layer. Stress relaxation and dislocation annihilation occur at room temperature. A model was developed to describe the dependency of the decrease of macrostress on the decrease of the dislocation density.

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X-Ray Diffraction Analysis of Simultaneous Changes in Stress and Dislocation Densities in Thin Films

  • A. C. Vermeulen (a1), R. Delhez (a1), Th.H. de Keijser (a1) and E. J. Mittemeijer (a1)

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