Hostname: page-component-7c8c6479df-ph5wq Total loading time: 0 Render date: 2024-03-28T22:13:43.800Z Has data issue: false hasContentIssue false

Trace Analysis by TXRF

Published online by Cambridge University Press:  06 March 2019

R. S. Hockett*
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
Get access

Abstract

Total reflection X-Ray FKiorescence (TXRF) originally was developed for trace analysis of small residues but has become a widespread method for measuring trace surface metal contamination on semiconductor substrates. It is estimated that approximately 100 TXRF instruments are in use in the semiconductor industry worldwide, and approximately half that for residue analysis in analytical laboratories. TXRF instrumentation is available today for reaching detection limits of the order of 109 atoms/cm2. This review emphasizes some of the more recent developments in TXRF for trace analysis, in particular with the use of synchrotron x-ray sources (SR-TXRF). There is some promise of reaching 107 atoms/cm2 detection limits for surface analysis of semiconductor substrates.

Type
IX. XRS Mathematical Methods, Trace Analysis and Other Applications
Copyright
Copyright © International Centre for Diffraction Data 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See TXRF reviews from the biannual TXRF Workshop scries published by Spcctnxhimica Acta (Vol 44B, No. 5, 1989; Vol 46B, No 10. 1991; Vol 48B, No. 2, 1993).Google Scholar
2. Hockett, R. S., “TXRF Semiconductor Applications,” Advances in X-Ray Analysis, Vol. 37, (Plenum Press, New York) 1994.(in publication).Google Scholar
3. Hockett, R. S., “TXRF Reference Standards: A Discussion,” Contamination Control and Defect Reduction in Semiconductor Manufacturing III, edited by Dennis N. Schmidt, ECS Proceedings Vol. 94-9, (The Electrochemical Society, Pennington, NJ) pp. 323338 (1994).Google Scholar
4. Nishihagi, K., Yamashita, N., Fujino, N., Taniguchi, K., and Ikeda, S., “Impurity Analysis on Si Wafer Using Monochro-TREX,” Advances in X-Ray Analysis, Vol. 34, (Plenum Press, New York) pp. 8189 (1991).Google Scholar
5. Utaka, T. and Aral, T., “Instrumentation for Total Reflection Fluorescent X-ray Spectrometry,” Advances in X-Ray Analysis, Vol. 35B , (Plenum Press, New York) pp. 933940 (1992).Google Scholar
6. Bernieke, W., “Basic Features of Total-reflection X-ray Fluorescence on Silicon Wafers,” Spectrochimica Acta 48B, 269 (1993).Google Scholar
7. Shimazaki, A., “Chemical analysis of silicon wafer surface contamination,” Defects in Silicon II , edited by Bullis, W. M., Gosele, U., and Shimura, F., ECS Proceedings Vol. 91-9 (The Electrochemical Society, Pennington, NJ) pp. 4756 (1991); U.S. Patents 4,584,886; 4,634,497; 4,990,459.Google Scholar
8. Neumann, C. and Eichingcr, P., “Ultra-trace analysis of metallic contamination on silicon wafer surfaces by vapour phase decomposition/total reflection X-ray fluorescence (VPD/TXRF),” Spectrochimica Acta 46B, 1369 (1991).Google Scholar
9. Hockett, R. S., “High Sensitivity Characterization of Contamination on Silicon Surfaces Using TXRF,” IES 1993 Proceedings Vol. 1, (Institute of Environmental Sciences, Chicago) pp. 432459 (1993).Google Scholar
10. SIA Workshop Working Group Reports, Semiconductor Industry Association, 1S93 (SEMI, Mountain View, CA).Google Scholar
11. Itda, A., Yoshinaga, A., Sakurai, K., and Goshi, Y., “Synchrotron Radiation Excited X-ray Fluorescence Analysis Using Total Reflection of X-rays,” Anal. Chem. 58, pp. 394397 (1986).Google Scholar
12. Brennar, S., Tompkins, W., Takaura, N., Pianetta, P., Laderman, S. S., Fischer-Colbrie, A., Kortright, J. B., Madden, M. C., and Wherry, D. C., “Wide Band-Pass Approaches to Total Reflection X-ray Fluorescence Using Synchrotron Radiation,” Proceedings of the Synchrotron Instrumentation Meeting, Gaithersburg, MD, August 1993.Google Scholar
13. Madden, M. C., Wherry, D. C., Pianetta, P., and Brennan, S., “Synchrotron Radiation for Measurement of Contaminants on Silicon Surfaces,” Mat. Res. Soc. Symp Proc. Vol. 307. pp. 125130 (1993).Google Scholar
14. Awaji, N., Kasc, M., and Komiya, S., “TRXRF analysis—Light elements near Si and the depth information of contamination,” Extended Abstracts of the Japan Society of Applied Physics, Vol. 2, Abstract 29p-ZQ-6, p. 705 (1994).Google Scholar
15. Amano, P., Yamada, H., Masui, S., and Kato, T., “X-ray fluorescence of Si wafer surface using SR from AUROA,” ibid, Abstract 30p-ZN-7, p. 584 (1994).Google Scholar
16. Laderman, S., presentation at U.S. SEMI Yield Enhancement seminar, Mountain View, CA, June 29, 1994.Google Scholar
17. Yakushiji, K., Ohkawa, S., Yoshinaga, A., and Harada, J., “Main Peak Profiles of Total Reflection X-ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lbeta (II),” Jpn. J. Appl. Phys. 32, pp. 11911196 (1993); K. Yakushiji, S. Ohkawa, A. Yoshinaga, and J. Harada, “ Origins of Spurious Peaks of Total Reflection X-ray Fluorescence Analysis of Si Wafers Excited by Monochromatic X-Ray Beam W-Lbeta,” Jpn. J. Appl. Phys. 33, pp. 1130-1135 (1994).Google Scholar
18. Gohshi, Y., private communication, August 4, 1994.Google Scholar
19. Grodzins, L., private communication, August 4, 1994.Google Scholar