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Structural Analysis of X-ray Diffraction Peaks of Thin Film Gallium Arsenide
Published online by Cambridge University Press: 06 March 2019
Abstract
A least-squares polynomial approximation of the Warren-Averbach Fourier coefficients line broadening analysis has shown flash-evaporated GaAs films to be characterized by De(lll) ≤ 400 Å and >εL2<½ ⋍ 0.002. Though twinning is the dominant faulting mechanism, a considerable amount of single and double deformation stacking faults are also present. Growth under a partial pressure of arsenic and tin has enhanced crystallite size by a factor of four.
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- Copyright © International Centre for Diffraction Data 1970