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Structural Analysis of X-ray Diffraction Peaks of Thin Film Gallium Arsenide

  • E. J. Charlson (a1), D. H. Hu (a1) and M. R. Farukhi (a1)

Abstract

A least-squares polynomial approximation of the Warren-Averbach Fourier coefficients line broadening analysis has shown flash-evaporated GaAs films to be characterized by De(lll) ≤ 400 Å and >εL2<½ ⋍ 0.002. Though twinning is the dominant faulting mechanism, a considerable amount of single and double deformation stacking faults are also present. Growth under a partial pressure of arsenic and tin has enhanced crystallite size by a factor of four.

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