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The Measurement of Triaxial Residual Stress in Polymer-Coated Aluminum Circuitry in Microchip Modules

  • Cyrus E. Crowder (a1), Michael J. Radler (a1) and Paul Townsend (a1)

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The development of high density interconnection (HDI) technology in multichip modules (MCM's) will establish a new level in the hierarchy of electronic systems. The modules use organic insulating layers which, because of their low dielectric permittivity and loss, enable circuits with maximum density and speed. However, differences in the coefficients of thermal expansion (CTE's) for the insulating layers, the interconnects, and the substrates, produce residual stresses in the various components during processing. These stresses must be understood to engineer reliable designs for MCM's.

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1. Noyan, I. C. and Cohen, J. B., in: “Residual Stress-Measurement by Diffraction and Interpretation”, Springer-Verlag, New York, 1987, Chapter 5.
2. Smith, D, K. and Smith, K. L., “POWD12 - A FORTRAN-77 Program for Calculating X-ray Powder Diffraction Patterns” -1986, The Pennsylvania State University, 239 Deike Building, University Park, PA.
3.Siemens Analytical X-ray Instruments, Inc., 6300 Enterprise Lane, Madison, WI, U.S.A., TEX-11/ODF-11 Software, June 1988.
4. Hauk, V. M., Oudelhoven, R. W. M., and Vaessen, G. H. J., Met, Trans. A, 13A:1239(1982).
5.Siemens Analytical X-ray Instruments, Inc., 6300 Enterprise Lane, Madison, WI, U.S.A., STRESS-AT Software, 1990.

The Measurement of Triaxial Residual Stress in Polymer-Coated Aluminum Circuitry in Microchip Modules

  • Cyrus E. Crowder (a1), Michael J. Radler (a1) and Paul Townsend (a1)

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