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Determination of Thickness of Multiple Layer Thin Films by X-ray Diffraction Technique

  • J. Chaudhuri (a1) and F. Hashmi (a1)

Abstract

In this study, the equations based on x-ray diffraction theory were developed to determine the thickness of multiple layer thin films. The kinematical expression of the integrated reflected intensity from the substrate and films was corrected for the primary and secondary extinction effects assuming a mosaic crystal model. As an example of the application of the method, thicknesses of a double heterostructure system, namely AlAs/AIGaAs/GaAs, were determined. Good agreement was obtained between the results from the x-ray measurement and scanning electron microscopy data demonstrating high precision of this technique.

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1. Chaudhuri, J., Shah, S. and Harbison, J. P., J. Appl. Phys. 66 (11), 5373 (1989).
2. Chaudhuri, J. and Shah, S., J. Appl, Phys. 69 (1), 499(1991).
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4. Darwin, C. G., Philos Mag., 27, 315 (1914); 27, 657 (1914), 43, 800 (1922).
5. Zachariasen, W. H., Theory of X-Ray Diffraction in Crystals (Wiley, New York, 1945), pp. 147175.
6. Ibers, J. A. and Hamilton, W. C., Eds., International Tables for X-Ray Crystallography Vol. IV (Kynock, Birmingham, 1974).

Determination of Thickness of Multiple Layer Thin Films by X-ray Diffraction Technique

  • J. Chaudhuri (a1) and F. Hashmi (a1)

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