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Application of Calculated Intensities for Reflection X-ray Topographs

  • R. C. Blish (a1)

Abstract

This paper is an effort to quantify such variables as penetration depth, intensity, and defect contrast in reflection X-ray topographs. The analysis includes an appropriate combination of geometrical, polarization, absorption, and scattering factors. Quantitative measurements have been made for a variety of diffracting planes and-wavelengths on Si and Ge. The calculations also fit qualitatively (fluorescent screen intensity} with observations on Zn, ZnO, CdS, GaAs, GaP. Topographs from some or all of these materials will be shown to illustrate how these calculations can predict useful diffraction conditions.

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References

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1. Turner, A. P. L., Vreeland, T. Jr. and Pope, D. P., “Experimental Techniques for Observing Dislocations by the Berg-Barrett Method,” Acta. Cryst, A24., 452-8 (1968).
2. International Tables for X- ray Crystallography, Kasper, J. S. and Lonsdale, K., Editors, Vol. II, 2nd Edition, p. 265 (1967).
3. Pope, D. P. and Vreeland, T. Jr., “Basal Dislocation Density Measurements in Zinc”, TransAIME 245, 2447-8 (1969).
4. Cullity, B. D., Elements of X- ray Diffraction, p. 7 (1956).

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