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3 - CMOS and BiCMOS Technologies

Published online by Cambridge University Press:  20 May 2022

Philippe Ferrari
Affiliation:
Université de Grenoble
Rolf Jakoby
Affiliation:
Technische Universität, Darmstadt, Germany
Onur Hamza Karabey
Affiliation:
ALCAN Systems GmbH, Germany
Gustavo P. Rehder
Affiliation:
Escola Politécnica da Universidade de São Paulo
Holger Maune
Affiliation:
Technische Universität, Darmstadt, Germany
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Summary

This chapter describes tunable circuits in CMOS and BiCMOS technologies. First, active and passive basic components are briefly described: MOS and bipolar transistors, and passive components like MOM capacitors, and transmission lines. Slow-wave transmission lines are described and compared to their microstrip lines counterparts, in terms of electrical performance and footprint. Next, tunable components are introduced, varactors and switches, and digital tunable capacitors. Then, tunable transmission lines are described. Some examples of tunable inductances are also highlighted. Finally, two families of tunable circuits are addressed, phase shifter and VCOs, respectively. Both circuits are used in many systems for beam-forming/steering concerning phase shifters, and transceivers concerning VCOs, respectively. Many design examples are given. Topologies based on the use of lumped components (varactors and inductances) are compared to those based on distributed components (tunable transmission lines). In the middle, hybrid approaches mixing lumped and distributed components can lead to very efficient solutions, both in terms of electrical performance and footprint.

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Publisher: Cambridge University Press
Print publication year: 2022

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References

Shacham-Diamand, Y., Osaka, T., Datta, M., and Ohba, T., Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications, 2009, New York: Springer Science+Business Media. DOI 10.1007/978-0-387-95868-2.CrossRefGoogle Scholar
Gildenblat, G., Li, X., Wu, W., et al., “PSP: An advanced surface-potential-based MOSFET model for circuit simulation,” IEEE Transactions on Electron Devices, vol. 53, no. 9, Sept. 2009.Google Scholar
Cao, K. M., Lee, W. -C., Liu, W., et al., “BSIM4 gate leakage model including source-drain partition,” in International Electron Devices Meeting, 2000. IEDM ‘00, pp. 815818, Dec. 10–13, 2000, San Francisco, CA, USA.Google Scholar
Kuo, B. C., Automatic Control System, 1982. Englewood Cliffs, NJ: Prentice-Hall.Google Scholar
Pruvost, S., “Etude de faisabilité de circuits pour systèmes de communication en bande millimétrique, en technologie BiCMOS SiGeC 0,13 μm,” PhD thesis, University of Lille 1, France, Nov. 2005.Google Scholar
Wheeler, H. A., “Transmission-line properties of parallel strips separated by a dielectric sheet,IEEE Transactions on Microwave Theory Techniques, vol. 13, no. 2, pp. 172185, Mar. 1965.CrossRefGoogle Scholar
Schneider, M. V., “Microstrip dispersion,” Proceeding of the IEEE, Letters, vol. 60, no. 1, pp.144146, Jan. 1972.CrossRefGoogle Scholar
Hammerstad, E. and Jensen, Ø., “Accurate models for microstrip computer-aided design,” in 1980 IEEE MTT-S International Microwave Symposium, pp. 407409, May 28–30, 1980, Washington, DC..Google Scholar
Ferrari, P., Fléchet, B., and Angénieux, G., “Time domain characterization of lossy arbitrary impedance transmission lines,” IEEE Microwave and Guided Wave Letters, vol. 4, no. 6, pp. 177179, June 1994.CrossRefGoogle Scholar
Mangan, A. M., Voinigescu, S. P., Ming-Ta, Y., and Tazlauanu, M., “De-embedding transmission line measurements for accurate modeling of IC designs,” IEEE Transactions on Electron Devices, vol. 53, no. 2, pp. 235241, Feb. 2006.CrossRefGoogle Scholar
Kaddour, D., Issa, H., Franc, A.-L., et al., “High-Q slow-wave coplanar transmission lines on 0.35-μm CMOS Process,” IEEE Microwave Wireless Component Letters, vol. 19, no. 9, pp. 542544, Sep. 2009.CrossRefGoogle Scholar
Hasegawa, H. and Okizaki, H., “M.I.S. and Schottky slow-wave coplanar striplines on GaAs substrates,” Electron. Letters, vol. 13, pp. 663664, Oct. 1977.CrossRefGoogle Scholar
Franc, A.-L., Pistono, E., Corrao, N., Gloria, D., and Ferrari, P., “Compact high-Q, low-loss mmW transmission lines and power splitters in RF CMOS technology,” in 2011 IEEE MTT-S International Microwave Symposium, June 5–10, 2011, Baltimore, MD.Google Scholar
Cheung, T. S. D., Long, J. R., Vaed, K., et al., “On-chip interconnect for mm-wave applications using an all-copper technology and wavelength reduction,” in Proceedings of the IEEE International Solid-State Circuits Conference, pp. 396397, Feb. 2003, San Francisco, CA.Google Scholar
Franc, A.-L., Pistono, E., Meunier, G., Gloria, D., and Ferrari, P., “A lossy circuit model based on physical interpretation for integrated shielded slow-wave CMOS coplanar waveguide structures,” IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 2, pp. 754763, Feb. 2013.CrossRefGoogle Scholar
Bautista, A., Franc, A.-L., and Ferrari, P., “Accurate parametric electrical model for slow-wave CPW and application to circuits design,” IEEE Transactions on Microwave Theory and Techniques., vol. 63, no. 12, pp. 42254235, Dec. 2015.CrossRefGoogle Scholar
Tang, X.-L., Franc, A.-L., Pistono, E., et al., “Performance improvement versus CPW and loss distribution analysis of slow-wave CPW in 65 nm HR-SOI CMOS technology,” IEEE Transactions Electron Devices, vol. 59, no. 5, pp. 12791285, May 2012.CrossRefGoogle Scholar
Bautista, A., Franc, A.-L., and Ferrari, P., “A predictive model for slow-wave coplanar striplines in integrated technologies,” in IEEE MTT-S International Microwave Symposium, May 17–22, 2016, San Francisco, CA.Google Scholar
Dang, J., Noculak, A., Korndörfer, F., Jungemann, C., and Meinerzhagen, B., “A semi-distributed method for inductor de-embedding,” in 2014 International Conference on Microelectronic Test Structures (ICMTS), March 24–27, 2014, Udine, Italy.Google Scholar
Schmid, R. L., Song, P., Coen, C. T., Ulusoy, A. C., and Cressler, J. D., “On the analysis and design of low-loss single-pole double-throw W-band switches utilizing saturated SiGe HBTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 62, no. 11, pp. 27552767, Nov. 2014.CrossRefGoogle Scholar
Chao, S. F., Wang, H., Su, C. Y., and Chern, J. G. J., “A 50 to 94-GHz CMOS SPDT switch using traveling-wave concept,” IEEE Microwave and Wireless Components Letters, vol. 17, no. 2, pp. 130132, Feb. 2007.CrossRefGoogle Scholar
Kim, J., Ko, W., Kim, S.-H., Jeong, J., and Kwon, Y., “A high-performance 40–85 GHz MMIC SPDT switch using FET-integrated transmission line structure,” IEEE Microwave and Wireless Components Letters, vol. 13, no. 12, pp. 505507, Dec. 2003.Google Scholar
Lin, K.-Y., Tu, W.-H., Chen, P.-Y., Chang, H.-Y., Wang, H., and Wu, R.-B., “Millimeter-wave MMIC passive HEMT switches using traveling-wave concept,” IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 8, pp. 17981808, Aug. 2004.CrossRefGoogle Scholar
Ta, C. M., Skafidas, E., and Evans, R. J., “A 60-GHz CMOS transmit/receive switch,” in 2007 IEEE Radio Frequency Integrated Circuits Symposium, pp. 725728, June 3–5, 2007, Honolulu, HI.CrossRefGoogle Scholar
Yeh, M. C., Tsai, Z. M., Liu, R. C., Lin, K. Y., Chang, Y. T., and Wang, H., “A millimeter-wave wideband SPDT switch with traveling-wave concept using 0.13-μm CMOS process,” in 2005 IEEE MTT-S International Microwave Symposium Digest, pp. 5356, June 12–17, 2005, Long Beach, CA.Google Scholar
Tang, X.-L., Pistono, E., Ferrari, P., and Fournier, J. M., “A travelling wave CMOS SPDT using slow-wave transmission lines for millimeter wave application,” IEEE Electron Devices Letters, vol. 34, no. 9, pp. 10941096, Sept. 2013.CrossRefGoogle Scholar
Tsai, Z.-M., Yeh, M.-C., Chang, H.-Y., et al., “FET-integrated CPW and the application in filter synthesis design method on traveling-wave switch above 100 GHz,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 5, pp. 20902097, May 2006.CrossRefGoogle Scholar
Debroucke, R., Pottrain, A., Titz, D., et al., “CMOS digital tunable capacitance with tuning ratio up to 13 and 10dBm linearity for RF and millimeterwave design,” in 2011 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), June 5–7, 2011, Baltimore, MD.Google Scholar
Chan, R.-J., and Guo, J.-C., “Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS, in 2014 IEEE MTT-S International Microwave Symposium, June 1–6, 2014, Tampa Bay, FL.Google Scholar
Jrad, A., Perrier, A.-L., Bourtoutian, R., Duchamp, J.-M. and Ferrari, P., “Design of an ultra compact electronically tunable microwave impedance transformer,” Electronics Letters, vol. 41, no. 12, pp. 123125, June 9, 2005.CrossRefGoogle Scholar
Hsieh, H., Chen, Y.-H., and Lu, L.-H., “A millimeter-wave CMOS LC-tank VCO with an admittance-transforming technique,” IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 9, pp. 18541860, June 2007.CrossRefGoogle Scholar
Gong, S., Shen, H., and Barker, N. S., “A 60-GHz 2-bit switched-line phase shifter using SP4T RF-MEMS switches,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 4, pp. 894900, April 2011.CrossRefGoogle Scholar
Kaddour, D., Pistono, E., Duchamp, J.-M., Arnould, J.-D., Ferrari, P., and Harrison, R. G., “A compact and selective low-pass filter with reduced spurious responses, based on CPW tapered periodic structures,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 6, pp. 23672375, June 2006.CrossRefGoogle Scholar
Kaddour, D.,” Conception et réalisation de filtres RF passe-bas à structures périodiques et filtres Ultra Large Bande, semi localisés en technologie planaire.” PhD thesis, Grenoble, France, July 11, 2007.Google Scholar
Cao, Z., Ma, Q., Bernardus Smolders, A., et al., “Advanced integration techniques on broadband millimeter-wave beam steering for 5G wireless networks and beyond,” IEEE Journal of Quantum Electronics, vol. 52, no. 1, pp. Jan. 2016.CrossRefGoogle Scholar
Natarajan, A., Komijani, A., Guan, X., Babakhani, A., and Hajimiri, A., “A 77-GHz phased-array transceiver with on-chip antennas in silicon: Transmitter and local LO-path phase shifting,” IEEE Journal of Solid-State Circuits, vol. 41, no. 12, pp. 28072819, Dec. 2006.CrossRefGoogle Scholar
Song, P., and Hashemi, H., “Wideband mm-wave phase shifters based on constant-impedance tunable transmission lines,” in 2016 IEEE MTT-S International Microwave Symposium, May 22–27, 2016, San Francisco, CA.Google Scholar
Tousi, Y., and Valdes-Garcia, A., “A Ka-band digitally-controlled phase shifter with sub-degree phase precision,” in 2016 IEEE Radio Frequency Integrated Circuits Symposium, pp. 356359, May 22–27, 2016, San Francisco, CA.CrossRefGoogle Scholar
Lange, J., “3.5 interdigitated stripline quadrature hybrid (Correspondence),” IEEE Transactions on Microwave Theory and Techniques, Vol. 17, No. 12, pp. 11501151, Dec. 1969.CrossRefGoogle Scholar
Xu, Leijun, Sjöland, Henrik, Törmänen, Markus, Tired, Tobias, Pan, Tianhong, and Xue, Bai, “A miniaturized Marchand balun in CMOS with improved balance for millimeter-wave applications,” IEEE Microwave and Wireless Components Letters, vol. 24, no. 1, pp. 5355, Jan. 2003.CrossRefGoogle Scholar
Lugo-Alvarez, J., Bautista, A., Podevin, F., and Ferrari, P., “High-directivity compact slow-wave coPlanar waveguide couplers for millimeter-wave applications,” in 44th European Microwave Conference, EuMC’14, Oct. 6–9, 2014, Rome, Italy.Google Scholar
Iskandar, Z., Lugo-Alvarez, J., Bautista, A., Pistono, E., Podevin, F., Puyal, V., Siligaris, A., and Ferrari, P., “A mm-Wave Ultra-Wideband Reflection-Type Phase Shifter in BiCMOS 55 nm Technology,” in Proceedings of the 46th European Microwave Conference, October 3–7, 2016, London.Google Scholar
Burdin, F., Iskandar, Z., Podevin, F., and Ferrari, P., “Design of simple reflection type phase shifters with high figure-of-merit until 360°,” IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 6, pp. 18831893, June 2015.CrossRefGoogle Scholar
Meng, F., Ma, K., Yeo, K. S., and Xu, S., “A 57-to-64-GHz 0.094-mm² 5-bit passive phase shifter in 65-nm CMOS,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, no. 5, pp. 19171925, May 2016.CrossRefGoogle Scholar
Kim, S. Y., and Rebeiz, G. M., “A low-power BiCMOS 4-element phased array receiver for 76–84 GHz radars and communication systems,” IEEE Journal of Solid-State Circuits, vol. 47, no. 2, pp. 359367, Feb. 2012.CrossRefGoogle Scholar
Li, W.-T., Chiang, Y.-C., Tsai, J.-H., Yang, H.-Y., Cheng, J.-H., and Huang, T.-W., “60-GHz 5-bit Phase Shifter With Integrated VGA Phase-Error Compensation,” IEEE Trans. Microwave Theory and Tech., vol. 61, no. 2, pp. 12241235, Mar. 2013.CrossRefGoogle Scholar
Shin, G.-S., Kim, J.-S., Oh, H.-M., Choi, S., Byeon, C. W., Son, J. H., Lee, J. H., and Kim, C.-Y., “Low Insertion Loss, Compact 4-bit Phase Shifter in 65 nm CMOS for 5G Applications,” IEEE Microw. Wireless Compon. Lett., vol. 26, no. 1, pp. 3739, Jan. 2016.CrossRefGoogle Scholar
Hoarau, C., Bailly, P.-E., Arnould, J.-D., Ferrari, P., and Xavier, P., “A RF Tunable Impedance Matching Network with a Complete Design and Measurement Methodology,37th European Microwave Conference, EuMC’07, Oct. 9–11, 2007, München, Germany.Google Scholar
Franc, A.-L., Thesis, Ph. D., “Lignes de propagation intégrées à fort facteur de qualité en technologie CMOS - Application à la synthèse de circuits passifs millimétriques,” July 6, 2011, Grenoble Alpes University (in French).Google Scholar
LaRocca, T., Tam, S.-W., Huang, D., et al., “Millimeter-wave CMOS digital controlled artificial dielectric differential mode transmission lines for reconfigurable ICs,” in 2008 IEEE MTT-S International Microwave Symposium, pp. 181184, June 15–20, 2008, Atlanta, GA.CrossRefGoogle Scholar
Yu, Y., Baltus, P., van Roermund, A., et al., “A 60GHz digitally controlled RF-beamforming receiver front-end in 65nm CMOS,” in 34th European Solid-State Circuits Conference (ESSCIRC), Sept. 15–19, 2008, Edinburgh, UK.Google Scholar
Tsai, M.-D., and Natarajan, A., “60GHz passive and active RF-path phase shifters in silicon,” in 2009 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), June 7–9, 2009, Boston, MA.Google Scholar
Biglarbegian, B., Nezhad-Ahmadi, M. R., Fakharzadeh, M., and Safavi-Naeini, S., “Millimeter-wave reflective-type phase shifter in CMOS technology,” IEEE Microwave and Wireless Components Letters, vol. 19, no. 9, pp. 560562, Sep. 2009.CrossRefGoogle Scholar
Krishnaswamy, H., Valdes-Garcia, A., and Lai, J.-W., “A silicon-based, all-passive, 60 GHz, 4-element, phased-array beamformer featuring a differential, reflection-type phase shifter,” in 2010 IEEE International Symposium on Phased Array Systems and Technology, Oct. 12–15, 2015, Waltham, MA.Google Scholar
Titz, D., Ferrero, F.; Luxey, C., et al., “Reflection-type phase shifter integrated on advanced BiCMOS technology in the 60 GHz band,” in 2011 IEEE 9th International New Circuits and systems conference (NEWCAS), June 26–29, 2011, Bordeaux, France.Google Scholar
Tabesh, CM, Arbabian, A, and Niknejad, A, “60GHz low-loss compact phase shifters using a transformer-based hybrid in 65nm CMOS,” in 2011 IEEE Custom Integrated Circuits Conference (CICC), Sept. 19–21, 2011, San Jose, CA.Google Scholar
Li, T.-W., and Wang, H., “A millimeter-wave fully differential transformer-based passive reflective-type phase shifter,” in 2015 IEEE Custom Integrated Circuits Conference (CICC), Sept. 28–30, 2015, San Jose, CA.Google Scholar
Hee, T. H. and Hajimiri, A., “Oscillator phase noise: A Tutorial,” IEEE J. Solid-State Circuits, vol. 35, no. 3, pp. 326336, Mar. 2000.Google Scholar
Cao, C., and K. K. O, “Millimeter-wave voltage-controlled oscillators in 0.13-μm CMOS technology,” IEEE Journal of Solid-State Circuits, vol. 41, no. 6, pp. 12971304, June 2006.CrossRefGoogle Scholar
Landsberg, N., and Socher, E., “240 GHz and 272 GHz fundamental VCOs using 32 nm CMOS technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 12, pp. 44614471, Dec. 2013.CrossRefGoogle Scholar
Nakamura, T., Masuda, T., Washio, K., and Kondoh, H., “A 59GHz push-push VCO with 13.9GHz tuning range using loop-ground transmission line for a full-band 60GHz transceiver,” in Proceedings of the IEEE International Solid-State Circuits Conference, Feb. 8–12, 2009, pp. 496497, San Francisco, CA.Google Scholar
Gonzalez Jimenez, J. L., Badets, F., Martineau, B., and Belot, D., “A 56GHz LC-tank VCO with 17% tuning range in 65nm bulk CMOS for wireless HDMI applications,” in 2009 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 481484, June 7–9, 2009, Boston, MA.CrossRefGoogle Scholar
Gonzalez, J. L., Badets, F., Martineau, B., and Belot, D., “A 56-GHz LC-Tank VCO with 17% tuning range in 65-nm bulk CMOS for wireless HDMI,” IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 13591366, May 2010.CrossRefGoogle Scholar
Huang, G., Kim, S.-K., Gao, Z., Kim, S., Fusco, V., and Sung Kim, B., “A 45 GHz CMOS VCO adopting digitally switchable metal-oxide-metal capacitors,” IEEE Microwave and Wireless Components Letters, vol. 21, no. 5, pp. 270272, May 2011.CrossRefGoogle Scholar
Yu, C.-Y., Chen, W.-Z., Wu, C.-Y., and Lu, T.-Y., “A 60-GHz, 14% tuning range, multi-band VCO with a single variable inductor,” in IEEE Asian Solid-State Circuits Conference, 2008. A-SSCC ‘08, Nov. 3–5, 2008, Fukuoka, Japan.Google Scholar
Lu, T.-Y., Yu, C.-Y., Chen, W.-Z., and Wu, Chung-Yu, “Wide Tuning range 60 GHz VCO and 40 GHz DCO using single variable inductor,” IEEE Trans. Circuits and Systems, vol. 60, no. 2, pp. 257267, Feb. 2013.CrossRefGoogle Scholar
You, P.-L., and Huang, T.-H., “A switched inductor topology using a switchable artificial grounded metal guard ring for wide-FTR MMW VCO applications,” IEEE Transactions on Electron Devices, vol. 60, no. 2, pp. 759766, Feb. 2013.CrossRefGoogle Scholar
Yin, J., and Luong, H. C., “A 57.5–90.1-GHz magnetically tuned multimode CMOS VCO,” IEEE Journal of Solid-State Circuits, vol. 48, no. 8, pp. 18511861, Aug. 2013.CrossRefGoogle Scholar
Andress, W. F., and Ham, D., “Standing wave oscillators utilizing wave-adaptive tapered transmission lines,” IEEE Journal of Solid-State Circuits, vol. 40, no. 3, pp. 638650, March 2005.CrossRefGoogle Scholar
Wu, W., Long, J. R., Staszewski, R. B., and Pekarik, J. J., “High-resolution 60-GHz DCOs with reconfigurable distributed metal capacitors in passive resonators,” in 2012 IEEE Radio Frequency Integrated Circuits Symposium, pp. 9194, May 17–19, 2012, Montréal, Canada.CrossRefGoogle Scholar
Wu, W., Long, J. R., Staszewski, R. B., “High-resolution millimeter-wave digitally controlled oscillators with reconfigurable passive resonators,” IEEE Journal of Solid-State Circuits, vol. 48, no. 11, pp. 27852794, Nov. 2013.CrossRefGoogle Scholar
Wood, J., Edwards, T. C., and Lipa, S., “Rotary travelling-wave oscillator arrays: A new clock technology,” IEEE Journal of Solid State Circuits, vol. 36, no. 11, pp. 16541665, Nov. 2001.CrossRefGoogle Scholar
Huang, D., Hant, W., Wang, N.-Y., et al., “A 60GHz CMOS VCO using on-chip resonator with embedded artificial dielectric for size, loss and noise reduction,” inProceedings of IEEE International Solid-State Circuits Conference, Feb. 6–9, 2006, San Francisco, CA.Google Scholar
Chien, J.-C., and Lu, L.-H., “Design of wide-tuning-range millimeter-wave CMOS VCO with a standing-wave architecture,” IEEE Journal of Solid-State Circuits, vol. 42, no. 9, pp. 19421952, Sept. 2007.CrossRefGoogle Scholar
Wu, L., Ng, A. W. L., Leung, L. L. K., and Luong, H. C., “A 24-GHz and 60-GHz dual-band standing-wave VCO in 0.13μm CMOS process,” in 2010 IEEE Radio Frequency Integrated Circuits Symposium, pp. 145148, May 23–25, 2010, Anaheim, CA, USA.CrossRefGoogle Scholar
Tagro, Y., Gloria, D., Boret, S., Dambrine, G., “MMW Lab In-Situ to Extract Noise Parameters of 65nm CMOS Aiming 70~90GHz Applications,” in 2009 IEEE Radio Frequency Integrated Circuits Symposium, pp. 397400, June 7–9, 2009, Boston, MA.CrossRefGoogle Scholar

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